A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP<sub>1dB</sub> in 0.13-µm CMOS

نویسندگان

چکیده

A K-band CMOS broadband low noise amplifier (LNA) based on the magnetically coupled resonator (MCR) matching network technique is presented and implemented in 0.13-µm technology. Such LNA consists of two common-source (CS) pseudo-differential stages, which use capacitive neutralization to enhance inversion isolation Gain. The MCR-based input achieves good balance loss performance by inventing a compensated capacitor series resistor loaded at center point transformer’s second coil, improves linearity Noise Figure (NF) LNA. measurement NF 3.7-5.6dB within frequency range 20.9-26.2GHz (BW3dB), peak gain 18.8dB. measured IP1dB -13dBm 24GHz with power consumption 18mW under 1.2V supply.

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ژورنال

عنوان ژورنال: IEICE Electronics Express

سال: 2022

ISSN: ['1349-2543', '1349-9467']

DOI: https://doi.org/10.1587/elex.19.20220294